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| fast switching speed for general purpose switching applications high conductance baw56t marking: jd BAV70T mark ing: jj bav99t marking: je maximum ratings @t a =25 parameter symbol limits unit reverse voltage v r 85 v forward current i o 75 ma forward power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -65~150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 1 a 85 v i r1 v r =75v 2 a reverse voltage leakage current i r2 v r =25v 0.03 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv diode capacitance c d v r =0 f=1mhz 1.5 pf reverse recovery time t r r i f =i r =10ma i rr =0.1i r, r l =100 ? 4 ns baw56t/BAV70T/bav99t switching diode dimensions in inches and (millimeters) sot-523 features ? ? ? http://www.luguang.cn mail:lge@luguang.cn
typical characteristics baw56t/BAV70T/bav99t switching diode http://www.luguang.cn mail:lge@luguang.cn |
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